Question

Why is the BJT breakdown voltage $BV_{CEO}$ typically smaller then $BV_{CBO}$? Select one: a. The carriers produced in the base-collector junction by the breakdown phenomena are injected into the base but as the base is open they introduce a bias on the base-emitter junction creating transistor action. b. The carriers produced in the base-collector junction are injected into the base but as the base is open they introduce a bias on the base-collector junction creating transistor action. c. The carriers produced in the emitter-collector junction by the breakdown phenomena are injected into the base but as the base is open they introduce a bias on the base-emitter junction creating transistor action. d. The carriers produced in the base region by avalanche phenomena introduce a bias on the base-emitter junction creating transistor action.

          Why is the BJT breakdown voltage $BV_{CEO}$ typically smaller then $BV_{CBO}$?
Select one:
a. The carriers produced in the base-collector junction by the breakdown phenomena are injected into the base but as the base is open they introduce a bias on the
base-emitter junction creating transistor action.
b. The carriers produced in the base-collector junction are injected into the base but as the base is open they introduce a bias on the base-collector junction creating
transistor action.
c. The carriers produced in the emitter-collector junction by the breakdown phenomena are injected into the base but as the base is open they introduce a bias on the
base-emitter junction creating transistor action.
d. The carriers produced in the base region by avalanche phenomena introduce a bias on the base-emitter junction creating transistor action.

Why is the BJT breakdown voltage BVCEO typically smaller then BVCBO?
Select one:
a. The carriers produced in the base-collector junction by the breakdown phenomena are injected into the base but as the base is open they introduce a bias on the
base-emitter junction creating transistor action.
b. The carriers produced in the base-collector junction are injected into the base but as the base is open they introduce a bias on the base-collector junction creating
transistor action.
c. The carriers produced in the emitter-collector junction by the breakdown phenomena are injected into the base but as the base is open they introduce a bias on the
base-emitter junction creating transistor action.
d. The carriers produced in the base region by avalanche phenomena introduce a bias on the base-emitter junction creating transistor action.

Added by Ann A.

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