Chapter Questions
C, Si and Ge have same no. of valence electrons. $C$ is an insulator because energy required to take one electron out from(A) Si is more(B) $\mathrm{C}$ is more(C) Ge is more(D) $\mathrm{C}$ is less
Ionization energy of isolated phosphorous atom $10 \mathrm{eV}$. Ionization energy of same atom in Si is nearly $\mathrm{eV}$(Relative Permittivity of silicon $=12$ )(A) $0.1$(B) $0.2$(C) $0.3$(D) $0.4$
By adding impurity in intrinsic semiconductor $\mathrm{P}$ type semiconductor is made. charge of these P type semiconductor is(A) trivalent, neutral(B) pentavalent, neutral(C) pentavalent, positive(D) trivalent, negative
Strong overlapping of different atomic orbital's makes(A) different energy level(B) energy band(C) Conductor(D) Insulators
We can not make $\mathrm{p}-\mathrm{n}$ junction diode by making $\mathrm{P}$ type semi-conductor join with N-type semi-conductor, because(A) Inter-atomic spacing becomes less than $1 \mathrm{~A}^{\circ}$(B) P-type will repel N-type(C) There will be discontinuity for the flowing charge carriers(D) semi-conducting properties will be lost
For $\mathrm{p}-\mathrm{n}$ junction, which statement is incorrect(A) Donor atoms are depleted of their holes in junction(B) No net charge exists far from junction(C) Barrier potential $\mathrm{V}_{\mathrm{B}}$ is generated(D) Energy $\mathrm{V}_{\mathrm{B}}$ is to be surmounted before any charge can flow across junction
The intrinsic semi-conductor has :(A) a finite resistance which does not change with temperature(B) infinite resistance which decreases with temperature(C) Finite resistance which decreases with temperature(D) Finite resistance which does not change with temperature
The behavior of Ge as semi-conductor is due to width of:(A) Conduction band being large(B) Forbidden band being large(C) Conduction band being small(D) Forbidden band being small and narrow
Which of the following is not the advantage of PN junction diode over tube valve?(A) Unlimited life(B) No warming-up time after switching(C) Large efficiency(D) Low consumption of Power
The forward biased diode is
The truth table for gate is:The gate is:(A) $\mathrm{OR}$(B) NOR(C) NAND(D) AND
A current gain for a transistor working as CB amplifier is $0.90$. If emitter current is $10 \mathrm{~mA}$, then base current is(A) $1 \mathrm{~m} \mathrm{~A}$(B) $2 \mathrm{~m} \mathrm{~A}$(C) $0.1 \mathrm{~mA}$(D) $0.2 \mathrm{~mA}$
For a transistor $\left(\mathrm{I}_{\mathrm{C}} / \mathrm{I}_{\mathrm{E}}\right)=0.96$, then $\mathrm{CE}$ current gain is:(A) 12(B) 6(C) 24(D) 48
The given truth table is for which logic gate?(A) $\mathrm{XOR}$(B) AND(C) NAND(D) NOR
For the given circuit of ideal P.N junction diode which is correct?(A) In F.B, the voltage across $R$ is $\mathrm{V}$(B) In R.B, the voltage across $\mathrm{R}$ is $\mathrm{V}$(C) In $\mathrm{F} \cdot \mathrm{B}$, the voltage across $\mathrm{R}$ is $-\mathrm{V}$(D) In R.B the voltage across $R$ is $-\mathrm{V}$
At $0^{\circ} \mathrm{K}$ temp, a N-type semi-conductor:(A) does not have any charge carriers(B) has few holes but no free electrons(C) few holes and few electrons(D) has equal number of holes and electrons
In Si-crystal, impurity donor atom have valency.(A) 2(B) 3(C) 4(D) 5
A N-P-N transistor conducts when collector is and emitter is with respect to base.(A) positive, negative(B) positive, positive(C) negative, negative(D) negative, positive
A full wave rectifier is operating at $50 \mathrm{~Hz}, 220 \mathrm{~V}$ the fundamental frequency of ripple will be(A) $50 \mathrm{~Hz}$(B) $75 \mathrm{~Hz}$(C) $110 \mathrm{~Hz}$(D) $100 \mathrm{~Hz}$
Reverse bias applied on a junction diode:(A) raises the potential barrier(B) increases majority charge carrier current(C) lowers the potential barrier(D) increases the temperature of junction
In the figure, the input is across $\mathrm{A}$ and $\mathrm{C}$ and output is across $\mathrm{B}$ and $\mathrm{D}$. The output is(A) same as input(B) Half wave rectified(C) Full wave rectified(D) zero
In the figure, the input is across $B$ and $D$ and output is across $\mathrm{A}$ and $\mathrm{C}$. The output is(A) same as input(B) Half wave rectified(C) Full wave rectified(D) zero
Digital circuits can be made to be respective use of:(A) AND gate(B) OR gate(C) NOT gate(D) NAND gate
The output current versus time curve of a rectifier is shown in the figure. The average value of the output-current is(A) 0(B) $\left(\mathrm{I}_{0} / 2\right)$(C) $\left(2 \mathrm{I}_{0} / \pi\right)$(D) I $_{0}$
A sinusoidal voltage of peak value 200 volts is connected to a diode and resistor $\mathrm{R}$ in the circuit shown. If diode is ideal, the r.m.s. voltage across $\mathrm{R}$ is volt.(A) 100(B) $\{(200) / \sqrt{2}\}$(C) 200(D) 280
For a transistor, in a common base configuration the alternating current gain $\alpha$ is given by:(A) $\left[\Delta \mathrm{I}_{\mathrm{C}} / \Delta \mathrm{I}_{\mathrm{B}}\right]_{(\mathrm{V}) \mathrm{C}=\mathrm{const}}$(B) $\left[\Delta \mathrm{I}_{\mathrm{B}} / \Delta \mathrm{I}_{\mathrm{C}}\right]_{(\mathrm{V}) \mathrm{C}=\mathrm{const}}$(C) $\left[\Delta \mathrm{I}_{\mathrm{C}} / \Delta \mathrm{I}_{\mathrm{E}}\right]_{(\mathrm{V}) \mathrm{C}=\text { const }}$(D) $\left[\Delta \mathrm{I}_{\mathrm{E}} / \Delta \mathrm{I}_{\mathrm{C}}\right]_{(\mathrm{V}) \mathrm{C}=\text { const }}$
In a N-P-N transistor circuit, the emitter, collector and base current are respectively $\mathrm{I}_{E}, I_{C}$ and $I_{B} .$ The relation between them is(A) $\mathrm{I}_{\mathrm{C}}<\mathrm{I}_{\mathrm{E}}<\mathrm{I}_{\mathrm{B}}$(B) $\mathrm{I}_{\mathrm{B}}<\mathrm{I}_{\mathrm{C}}<\mathrm{I}_{\mathrm{E}}$(C) $\mathrm{I}_{\mathrm{B}}>\mathrm{I}_{\mathrm{C}}<\mathrm{I}_{\mathrm{E}}$(D) $\mathrm{I}_{\mathrm{B}}>\mathrm{I}_{\mathrm{C}}>\mathrm{I}_{\mathrm{E}}$
Assuming that the junction diode is ideal, the current through the diode is $\mathrm{mA}$(A) 1(B) 10(C) 20(D) 30
The symbol represents:(A) NOT gate(B) OR gate(C) AND gate(D) NOR gate
The combinations of NAND gates shown here under are equivalent to:(A) OR gate and NOT gate(B) AND gate and OR gate(C) AND gate and NOT gate(D) OR gate and AND gate
How many NAND gates are used to form AND gate?(A) 1(B) 2(C) 3(D) 4
Ripples are(A) A.C. mixed with D.C(B) D.C. mixed with output(C) D.C. output(D) A.C. output
In an P.N.P transistor circuit, the collector current is $10 \mathrm{~mA}$. If $90 \%$ of the electrons emitted reach the collector:(A) $\mathrm{I}_{\mathrm{E}}=9 \mathrm{~m} \mathrm{~A}$(B) $\mathrm{I}_{\mathrm{E}}=10 \mathrm{~mA}$(C) $\mathrm{I}_{\mathrm{B}}=1 \mathrm{~mA}$(D) $\mathrm{I}_{\mathrm{B}}=-1 \mathrm{~mA}$
When a P-type semi-conductor is heated:(A) number of holes increases while that of electrons decreases(B) number of electron increases while that of hole decreases(C) number of electrons and holes remains same(D) number of electrons and holes increases equally
The depletion layer in PN junction diode is caused by(A) drift of holes(B) Diffusion of impurity ions(C) diffusion of charge carriers(D) drift of electrons
The active junction area in a solar cell is as we want power(A) small, more(B) small, small(C) large, more(D) large, small
The forbidden energy band gap in semi-conductor, conductor and insulator are $E_{1}, E_{2}$ and $E_{3}$ respectively. The relation among then is:(A) $E_{1}<E_{2}>E_{3}$(B) $\mathrm{E}_{1}>\mathrm{E}_{2}>\mathrm{E}_{3}$(C) $E_{1}<E_{2}<E_{3}$(D) $\mathrm{E}_{1}>\mathrm{E}_{2}<\mathrm{E}_{3}$
An N-P-N Transistor circuit is shown in figure is(A) A common base circuit(B) A common emitter circuit(C) A common collector circuit(D) Oscillator circuit
In a common emitter amplifier, output resistance is $5000 \Omega$ and input resistance is $1000 \Omega .$ If peak value of signal voltage is $1 \mathrm{mV}$ and $\beta=100$, then the peak value of output voltage is(A) $0.1 \mathrm{~V}$(B) $0.3 \mathrm{~V}$(C) $0.2 \mathrm{~V}$(D) $0.5 \mathrm{~V}$
The A.C. current gain of a transistor is 100 . If the base current changes by $100 \mu \mathrm{A}$, What is the charge in collector current?(A) $20 \mathrm{~mA}$(B) $30 \mathrm{~mA}$(C) $10 \mathrm{~mA}$(D) $10 \mu \mathrm{A}$
What is the output of the combination of the gates shown in the fig. below?(A) $\mathrm{A}+\underline{\mathrm{A}} \cdot \mathrm{B}$(B) $\mathrm{A}+\mathrm{A} \cdot \mathrm{B}$(C) $(\mathrm{A}+\mathrm{B}) \cdot(\underline{\mathrm{A}} \cdot \mathrm{B})$(D) $(\mathrm{A}+\mathrm{B}) \cdot(\underline{\mathrm{A}}+\mathrm{B})$
The expression of $\mathrm{Y}$ in the following circuit is:(A) $\mathrm{AB}+\mathrm{CD}$(B) $\mathrm{A}+\mathrm{BCD}$(C) $\mathrm{A}+\mathrm{B}+\mathrm{C}+\mathrm{D}$(D) $\mathrm{A} \cdot \mathrm{B} \cdot \mathrm{C} \cdot \mathrm{D}$
Which of the following figure represents an ideal diode characteristics?
In Ge sample, traces of gallium are added as impurity. The resultant sample would behave like:(A) a conductor(B) a P-type semiconductor(C) an N-type semiconductor(D) an insulator
A light emitting diode has a voltage drop of $2 \mathrm{~V}$ across it when $10 \mathrm{~mA}$ current is passed. If this $\mathrm{LED}$ is to be operated with $6 \mathrm{~V}$ battery the value of limiting resistor would be(A) $400 \Omega$(B) $4000 \Omega$(C) $40 \mathrm{k} \Omega$(D) $300 \Omega$
NAND gate is(A) A basic gate(B) Not a universal gate(C) A universal gate(D) Multipurpose gate
The number of holes and electrons in an intrinsic conductors are $\mathrm{x}$ and $\mathrm{y}$ respectively at room temperature. Which of the following options are true?(A) $x>y$(B) $\mathrm{y}>\mathrm{x}$(C) $x=y$(D) $x<<y$
How will you increase the resistivity of Ge semi-conductor?(A) On adding donor impurity(B) On adding acceptor impurity(C) On making UV light incident on Ge crystal(D) On decreasing the temperature
What is type of material, for the energy band diagram shown in the figure?(A) N-type semi-conductor(B) P-type semi-conductor(C) Insulator(D) Intrinsic semi-conductor
From the following semi-conductor devices, operates in forward bias only.(A) Varactar diode(B) Zenger diode(C) Light emitting diode(D) photo-diode
device is the odd-one out.(A) solar-cell(B) Varactor diode(C) Photodiode(D) Zenger diode
The value of depletion capacitance on decreasing the reverse bias on varactor diode(A) decreases(B) increases(C) becomes zero(D) does not change
Which of the following statement is correct for transistor $\mathrm{LC}$ oscillator circuit?(A) It works with negative feed back(B) The phase difference between output and input signal is $\pi$ radian(C) To start oscillation external signal is required(D) The frequency of output signal is independent of the components used in feedback circuit
The frequency of output signal of LC oscillator circuit is $100 \mathrm{~Hz}$ with capacitance value $0.1 \mu \mathrm{F}$. If value of capacitance is taken as $0.2 \mu \mathrm{F}$, the frequency of output signal(A) decreases by $(1 / \sqrt{2})$(B) increases by $(1 / \sqrt{2})$(C) decreases by $(1 / 2)$(D) increases by $(1 / 2)$
The Common Emitter amplifier has voltage gain equal to 300 and its input signal is $0.5 \cos (100 t)$ volt. The output signal will be equal to(A) $150 \cos (100 \mathrm{t})$(B) $300 \cos (100 \mathrm{t})$(C) $150 \cos (100 t+\pi)$(D) $300 \cos (100 t-\pi)$
Common base current gain of a NPN transistor is $0.99$. The input resistance is $1000 \Omega$ and load resistance is $10,000 \Omega$. The voltage gain in common emitter mode is(A) 9900(B) 99000(C) 99(D) $\overline{990}$
The logic circuit shown in the figure, is the equivalent diagram of which logic gate?(A) OR gate(B) NAND gate(C) AND gate(D) NOR gate
In forward bias made, the PN junction diode resistance will(A) infinity(B) zero(C) less(D) more
To obtain OR gate from NOR gate, you will need(A) one NOR gate(B) one NOT gate(C) Two NOR gate(D) one OR gate
For Boolean identities match the pair:(1) $\underline{\underline{A}}$(P) $\underline{\mathrm{A}}+\underline{\mathrm{B}}$(2) $\underline{\mathrm{A}+\mathrm{B}}$(Q) A \cdot B(3) $\underline{\mathrm{A} \cdot \mathrm{B}}$(R) $\underline{A} \cdot \underline{B}$(4) $\mathrm{A} \cdot(\underline{\mathrm{A}}+\mathrm{B})$(S) $\mathrm{A}$(A) $(1)-(\mathrm{S}),(2)-(\mathrm{P}),(3)-(\mathrm{Q}),(4)-(\mathrm{R})$(B) $(1)-(\mathrm{S}),(2)-(\mathrm{R}),(3)-(\mathrm{Q}),(4)-(\mathrm{P})$(C) (1) - (S), (2) - (Q), (3) - (P), (4) - (R)(D) $(1)-(\mathrm{S}),(2)-(\mathrm{R}),(3)-(\mathrm{P}),(4)-(\mathrm{Q})$
The ratio of concentration of electrons and holes in a semi-conductor is $(7 / 5)$ and the ratio of currents is $(7 / 4)$, then what is the ratio of their drift velocities?(A) $(4 / 5)$(B) $(5 / 6)$(C) $(4 / 5)$(D) $(5 / 4)$
In a P-type silicon, which of the following statement is true?(A) Electrons are majority charge carries and trivalent atoms are the dopants(B) Electrons are minority charge carries and pentavalent atoms are dopants(C) Holes are minority charge carries and pentavalent atoms are dopants(D) Holes are majority charge carries and trivalent atoms are dopants
In the circuit below $\mathrm{A}$ and $\mathrm{B}$ represents two inputs and $\mathrm{C}$ represents output. The circuit represents(A) NOR gate(B) NAND gate(C) AND gate(D) OR gate
A zener diode used as voltage regulator is connected(i) in forward bias(ii) in reverse bias(iii) in parallel with load (iv) in series with load(A) (i) and (ii) are correct(B) (ii) and (iii) are correct(C) only (i) is correct(D) only (iv) is correct
A n-p-n transistor is used in common emitter mode in an amplifier it. A change of $40 \mu \mathrm{A}$ in the base current changes the output current by $2 \mathrm{~m} \mathrm{~A}$ and $0.04 \mathrm{~V}$ in input voltage.The input resistance is(A) $1 \mathrm{k} \Omega$(B) $10 \Omega$(C) $10 \mathrm{k} \Omega$(D) $100 \Omega$
A n-p-n transistor is used in common emitter made in an amplifier it. A change of $40 \mu \mathrm{A}$ in the base current changes the output current by $2 \mathrm{~mA}$ and $0.04 \mathrm{~V}$ in input voltage.The current amplification factor is(A) 20(B) 30(C) 50(D) 400
A n-p-n transistor is used in common emitter made in an amplifier it. A change of $40 \mu \mathrm{A}$ in the base current changes the output current by $2 \mathrm{~mA}$ and $0.04 \mathrm{~V}$ in input voltage.If a load of $6 \mathrm{k} \Omega$ is used, then the voltage gain of the amplifier is(A) 100(B) 200(C) 300(D) 400
A n-p-n transistor is used in common emitter made in an amplifier it. A change of $40 \mu \mathrm{A}$ in the base current changes the output current by $2 \mathrm{~mA}$ and $0.04 \mathrm{~V}$ in input voltage.An amplifier has voltage gain $A_{V}=1000$. The voltage gain in $\mathrm{dB}$ is(A) $20 \mathrm{~dB}$(B) $30 \mathrm{~dB}$(C) $3 \mathrm{~dB}$(D) $60 \mathrm{~dB}$
A potential barrier of $0.6 \mathrm{~V}$ exists across a P-N junction. If the depletion region is $1 \mu \mathrm{m}$ wide, what is the intensity of electric field in the region?(A) $4 \times 10^{5} \mathrm{Vm}^{-1}$(B) $5 \times 10^{5} \mathrm{Vm}^{-1}$(C) $6 \times 10^{5} \mathrm{Vm}^{-1}$(D) $2 \times 10^{5} \mathrm{Vm}^{-1}$
when a PN junction diode is forward biased, then the lepletion region is and barrier height is(A) reduced, increases(B) widened, reducedC) reduced, reduced(D) increased, increased
Which of the following circuit provides full wave rectification?
A common-emitter amplifier has a voltage gain of 100 , an input impedance of $100 \Omega$ and an output impedance of $200 \Omega$. The product of voltage gain and current gain is(A) 1000(B) 3000(C) 5000(D) 500
A P-N photodiode is made of a material with a band gap of 2.0ev. The minimum frequency of the radiation that can be absorbed by the material is nearly (Take hc $=1240 \mathrm{eVnm}$ )(A) $5 \times 10^{14} \mathrm{~Hz}$(B) $20 \times 10^{14} \mathrm{~Hz}$(C) $1 \times 10^{14} \mathrm{~Hz}$(D) $10 \times 10^{14} \mathrm{~Hz}$
The bolean equation for the circuit is(A) $\mathrm{Y}=\underline{\mathrm{A}} \cdot \mathrm{B}+\mathrm{C}$(B) $\mathrm{Y}=\underline{\mathrm{A}} \cdot(\mathrm{B}+\mathrm{C})$(C) $\mathrm{Y}=\underline{\mathrm{A}}(\underline{\mathrm{B}}+\underline{\mathrm{C}})$(D) $\mathrm{Y}=\underline{\mathrm{A}} \cdot(\mathrm{B}+\underline{\mathrm{C}})$
A n-p-n transistor circuit has $\alpha=0.985 .$ If $\mathrm{I}_{\mathrm{c}}=9 \mathrm{~mA}$ then the value of $\mathrm{I}_{\mathrm{b}}$ is(A) $0.003 \mathrm{~mA}$(B) $0.66 \mathrm{~mA}$(C) $0.015 \mathrm{~mA}$(D) $0.13 \mathrm{~mA}$
For a transistor amplifier, the voltage gain(A) remains constant for all frequencies(B) is high at high and low frequencies and constant in the mid-frequency range(C) is low at high and low frequencies and constant in the mid-frequency range(D) None of the above
The current flowing through $10 \Omega$ resistor in the circuit shown in the figure is(A) $50 \mathrm{~mA}$(B) $20 \mathrm{~mA}$(C) $40 \mathrm{~mA}$(D) $80 \mathrm{~mA}$
The input and outputs from different time intervals are given below for NAND gateThe value taken by $\mathrm{P}, \mathrm{Q}, \mathrm{R}$ and $\mathrm{S}$ are respectively(A) $1,0,1,1$(B) $0,1,0,0$(C) $0,1,0,1$(D) $1,1,1,0$
The manifestation of band structure in solids is due to:(A) Heisenberg's uncertainty principle(B) Pauli's exclusion principle(C) Bohr's correspondence principle(D) Boltzmann's low
Copper and silicon material is cooled down from $600 \mathrm{~K}$ to $400 \mathrm{~K}$ then, resistivity of cooper and silicon(A) increases, decreases(B) decreases, increases(C) decreases, decreases(D) increase, increases
Semi-conductor has phosphorus as impurity then it will have(A) $\mathrm{n}_{\mathrm{e}}>\mathrm{n}_{\mathrm{h}}$(B) $\mathrm{n}_{\mathrm{e}}<<\mathrm{n}_{\mathrm{h}}$(C) $\mathrm{n}_{\mathrm{e}}=\mathrm{n}_{\mathrm{h}}$(D) $n_{e}=n_{h}=n_{i}$
Zener diode is used as(A) Full. wave rectifier(B) amplifier(C) A.C. voltage regulator(D) D.C. voltage regulator
Break down voltage of a diode is $5 \mathrm{~V}$. By which effect this breakdown occurs in diode?(A) Only avalanche effect(B) Only zener effect(C) Avalanche or zener effect(D) None of the above
When NPN transistor is used as an amplifier then(A) electron moves from base to collector(B) hole travels from emitter to base(C) hole goes to emitter from base(D) electron goes to base from collector
For a given amplifier circuit, to make transistor active as an amplifier, how much value of voltages to be kept for $\mathrm{V}_{\mathrm{BB}}$ battery and $\mathrm{V}_{\mathrm{CC}}$ battery?(A) $\mathrm{V}_{\mathrm{BB}}=-1 \mathrm{~V} \mathrm{~V}_{\mathrm{CC}}=+5 \mathrm{~V}$(B) $\mathrm{V}_{\mathrm{BB}}=-1 \mathrm{~V} \mathrm{~V}_{\mathrm{CC}}=-5 \mathrm{~V}$(C) $\mathrm{V}_{\mathrm{BB}}=+1 \mathrm{~V} \mathrm{~V}_{\mathrm{CC}}=+5 \mathrm{~V}$(D) $\mathrm{V}_{\mathrm{BB}}=+1 \mathrm{~V} \mathrm{~V}_{\mathrm{CC}}=-5 \mathrm{~V}$
Which of the following logic gate will have output $1 ?$
For gate, the output is 1 only when both input are ' $\mathrm{O}^{\prime}$(A) AND(B) NAND(C) $\mathrm{OR}$(D) NOR
In VLSI circuits more than gates are contained.(A) 1000(B) 100(C) 10(D) 500
The flow of valence electrons to the left means that holes are flowing.(A) Left(B) Right(C) Either way(D) None
How many free electrons does a P-type semiconductor contain?(A) Many(B) None(C) Only those produced by thermal energy(D) Same number as holes
Suppose an intrinsic semi-conductor at room temperature has 1 billion free electrons at room temperature. If temperature changes to $75^{\circ} \mathrm{C}$, how many holes are there?(A) Fewer than 1 billion(B) 1 billion(C) More than 1 billion(D) Impossible to say
Which of the following doesn't fit in the group?(A) Conductor(B) Semi conductor(C) Four valence electrons(D) Crystal structure
What kind of device is a diode?(A) Bilateral(B) Linear(C) Nonlinear(D) Unipolar
We want a peak load voltage of $40 \mathrm{~V}$ out of a bridge rectifier, What is the approximate rms value of secondary voltage?(A) $0 \mathrm{~V}$(B) $14.4 \mathrm{~V}$(C) $28.3 \mathrm{~V}$(D) $56.6 \mathrm{~V}$
The load voltage is approximately constant when a zener diode is(A) Forward biased(B) Reverse biased(C) Operating in breakdown region(D) Unbiased
When source voltage increases in a zener diode, which of these current remains approximately constant?(A) Series current(B) Zener current(C) Load current(D) Total current
The device associated with voltage controlled capacitance is(A) Light emitting diode(B) Photo diode(C) Varactor diode(D) Zener diode
For normal operation of the transistor, the collector diode has to be(A) Forward biased(B) Reverse biased(C) Non conducting(D) Operating in breakdown region
Most of the electrons in the base of N-P-N transistor flow(A) Out of the base lead(B) Into the collector(C) Into the emitter(D) Into the base supply
Direction for Assertion - Reason type questions(A) If both Assertion and Reason are true and reason is the correct explanation of assertion.(B) If both Assertion and Reason are true but Reason is not the correct explanation of assertion.(C) If Assertion is true but Reason is false(D) If both assertion and reason are falseA: Intrinsic charge carries are thermally generated$\mathrm{R}$ : Their availability can be easily controlled(A) a(B) b(C) $\mathrm{c}$(D) d
Direction for Assertion - Reason type questions(A) If both Assertion and Reason are true and reason is the correct explanation of assertion.(B) If both Assertion and Reason are true but Reason is not the correct explanation of assertion.(C) If Assertion is true but Reason is false(D) If both assertion and reason are falseA: Impurity atoms for silicon is selected from third or fifth group$R$ : These Impurity atoms have same size as that of $\mathrm{Si}$(A) a(B) $b$(C) c(D) d
Direction for Assertion - Reason type questions(A) If both Assertion and Reason are true and reason is the correct explanation of assertion.(B) If both Assertion and Reason are true but Reason is not the correct explanation of assertion.(C) If Assertion is true but Reason is false(D) If both assertion and reason are falseA: Photodiode are operated in reverse bias$\mathrm{R}$ : In reverse bias fractional change in minority charge carrier is more(A) a(B) $b$(C) c(D) $\mathrm{d}$
Direction for Assertion-Reason type questions(A) If both Assertion and Reason are true and reason is the correct explanation of assertion.(B) If both Assertion and Reason are true but Reason is not the correct explanation of assertion.(C) If Assertion is true but Reason is false(D) If both assertion and reason are falseA : NAND (or NOR) gates are called digital building blocks$\mathrm{R}$ : The different combination of NAND (or NOR) gates can produce all the basic or complicated gates.(A) a(B) $b$(C) $\mathrm{c}$(D) d
Direction for Assertion - Reason type questions(A) If both Assertion and Reason are true and reason is the correct explanation of assertion.(B) If both Assertion and Reason are true but Reason is not the correct explanation of assertion.(C) If Assertion is true but Reason is false(D) If both assertion and reason are falseA: The colour of light emitted by depends on its forward bias.$\mathrm{R}$ : The forward biasing of PN junction diode will increase the width of depletion layer(A) a(B) $b$(C)(D) $\mathrm{d}$
Direction for Assertion - Reason type questions(A) If both Assertion and Reason are true and reason is the correct explanation of assertion.(B) If both Assertion and Reason are true but Reason is not the correct explanation of assertion.(C) If Assertion is true but Reason is false(D) If both assertion and reason are falseA: The ionization energy of isolated phosphorous is very large$\mathrm{R}$ : The ionization energy of phosphorous in lattice is very small(A) a(B) $b$(C) $\mathrm{c}$(D) $\mathrm{d}$
Direction for Assertion - Reason type questions(A) If both Assertion and Reason are true and reason is the correct explanation of assertion.(B) If both Assertion and Reason are true but Reason is not the correct explanation of assertion.(C) If Assertion is true but Reason is false(D) If both assertion and reason are falseA: Mostly transistor are used in common emitter configuration$\mathrm{R}$ : Common emitter configuration provide more current gain and small voltage gain(A) a(B) b(C) $\mathrm{c}$(D) $d$
Direction for Assertion - Reason type questions(A) If both Assertion and Reason are true and reason is the correct explanation of assertion.(B) If both Assertion and Reason are true but Reason is not the correct explanation of assertion.(C) If Assertion is true but Reason is false(D) If both assertion and reason are falseA : A transistor amplifier circuit in common emitter configuration has low input impedance$\mathrm{R}$ : Base-emitter junction is forward biased(A)(B)(C)(D)